Three-Dimensional Hydrodynamic Simulation of Submicron MOSFET's
نویسندگان
چکیده
This paper presents a method for solving the 3-D hydrodynamic (HD) model in submicron semiconductor devices. The main features of this method aTe the fairly low memory and CPU time requirements, and excellent convergent property. Simulation results of a 3-D submicron MOSFET are provided.
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تاریخ انتشار 2007